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Goford Products

GT095N10 N MOSFET

In POWER SO-8(DFN5*6) and DPAK(TO-252) with advanced trench technology to provide excellent RDS(ON) , low gate charge can be widely applied for Power supply, Led Driver, EV charger etc.

GT023N10 N MOSFET

TO-247, D2PAK(to-263), TOLL, TO-220 , ideal choice for motor control, BMS for its Large current carrying capacity, Low conduction resistance Low thermal resistance.

GT065P06 P MOSFET

SGT P Mos in TO-220 POWER SO-8(DFN5*6-8L) TO-220F DPAK(TO-252) ,the simplified gate driving technique that often reduces overall cost, can be widely used for motor drives, battery management systems, load switches.

GC11N65 SJ MOFET

SJ MOS in TO-220 POWER SO-8(DFN5*6-8L) TO-220F DPAK(TO-252) D2PAK(TO-263) with better conduction resistance,extremely low gate charge,excellent EMI performance ,ideal choice for household appliance drivers,computer power supplies,UPS,EV charging.

45P40 P MOSFET

P MOS in DPAK with advanced trench technology to provide excellent RDS(ON) , low gate charge can be widely applied for Power supply, BMS, Converter and EV charger etc.

GT011N03D5E clip + ESD

N channel trench Mos , in power so-8 (DFN5*6), with Large current carrying capacity, Low conduction resistance , can be widely used for Telecom.

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